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| SS8550LT1 PNP General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 VCEO Value -25 -40 -6.0 -1500 625 5.0 200 SS8550LT1=Y2 -0.1 -100 -100 -25 -40 -6.0 ) E=-20Vdc, I E= 0 -40 -5.0 O -0.1 -0.1 -0.1 u u u WEITRON http://www.weitron.com.tw SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=-100 mAdc, VCE=1.0 Vdc) (IC=-800 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC=-800 mAdc, IB=-80mAdc) Base-Emitter Saturation Voltage (IC=-800 mAdc, IB=-80mAdc) hFE (1) hFE (2) VCE(sat) VBE(sat) 120 40 350 -0.5 -1.2 Vdc Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=-50 mAdc, VCE=-10 Vdc, f=30MHz) fT 100 MHz CLASSIFICATION OF hFE(1) Rank Range L 120-200 H 200-350 WEITRON http://www.weitron.com.tw SS8550LT1 -0.5 10 00 VCE = -1V IB=-4.0mA IC[mA], COLL ECTOR CURRENT -0.4 IB=-3.5mA IB=-3.0mA hFE, DC CURRENT GAIN 10 0 -0.3 IB=-2.5mA IB=-2.0mA -0.2 IB=-1.5mA IB=-1.0mA 10 -0.1 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 -2.0 1 -0.1 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT FIG.1 Static Characteristic FIG.2 DC Current Gain -10000 VBE(s at), VCE(s at)[V], SATURATION VOLTAGE -100 IC=10IB VCE = -1V IC[mA], COLLECTOR CURRENT -100 -1000 -100 0 -10 VBE(sat) -100 -1 VCE(sat) -10 -0.1 -1 -10 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLL ECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE FIG.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage FIG.4 Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 VCE=-10V 100 10 -1 -10 -100 -1000 IC[mA], COLLE CTOR CURRENT FIG.5 Current Gain Bandwidth Product WEITRON http://www.weitron.com.tw SS8550LT1 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw |
Price & Availability of SS8550LT1
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